BLV98CE datasheet(4/11 Pages) PHILIPS

4 / 11 page

March 1993

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLV98CE

CHARACTERISTICS

at Tj =25 °C unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter

IC = 25 mA

−−

V(BR)CEO

collector-emitter breakdown voltage

open base

IC = 50 mA

−−

V(BR)EBO

emitter-base breakdown voltage

open collector

IE = 5 mA

3.5

−−

ICES

collector leakage current

VBE =0

VCE = 27 V

−−

5mA

hFE

DC current gain

IC =1 A

VCE = 20 V

−−

collector capacitance at f = 1 MHz

IE =Ie =0

VCB = 24 V

−

Cre

feedback capacitance at f = 1 MHz

IC =0

VCE = 24 V

−

Ccf

collector-ﬂange capacitance

−

Fig.4

DC current gain as a function of collector

current; typical values.

handbook, halfpage

hFE

IC (A)

100

MDA451

VCE = 24 V

20 V

Fig.5

Output capacitance as a function of VCB;

typical values.

handbook, halfpage

010

VCB (V)

(pF)

100

MDA452

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