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BLW30 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BLW30
Description  VHF power transistor
PDF  11 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLW30 Datasheet(HTML) 2 Page - NXP Semiconductors

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September 1991
2
Philips Semiconductors
Product specification
VHF power transistor
BLW30
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Excellent reliability
• Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead 3
⁄8 inch
SOT120 capstan envelope with a
ceramic cap. It is designed for
common emitter, class-B operation
mobile VHF transmitters with a supply
voltage of 12.5 V. All leads are
isolated from the stud.
PINNING - SOT120
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
PIN CONFIGURATION
MODE OF
OPERATION
f
(MHz)
VCE
(V)
PL
(W)
GP
(dB)
ηC
(%)
c.w. class-B
175
12.5
30
> 10
> 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
MSB056
2
3
1
4



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