FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKBA4752

N-Ch 40V Fast Switching MOSFETs

22

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

40

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=20A

---

3.6

4.2

m



VGS=4.5V , ID=20A

---

5.1

6.0

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.2

V

IDSS

Drain-Source Leakage Current

VDS=32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

0.8

---



Qg

Total Gate Charge

VDS=20V , VGS=4.5V , ID=20A

---

16

---

nC

Qgs

Gate-Source Charge

---

4.6

---

Qgd

Gate-Drain Charge

---

7.9

---

Td(on)

Turn-On Delay Time

VDD=20V , VGS=10V , RG=3

,

ID=20A

---

23.8

---

ns

Tr

Rise Time

---

11.5

---

Td(off)

Turn-Off Delay Time

---

39

---

Tf

Fall Time

---

14

---

Ciss

Input Capacitance

VDS=20V , VGS=0V , f=1MHz

---

1523

---

pF

Coss

Output Capacitance

---

475

---

Crss

Reverse Transfer Capacitance

---

67

---

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current1,6

VG=VD=0V , Force Current

---

---

50

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1.2

V

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=46A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

6. Bonding wire limitation current is 50A.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Diode Characteristics