BLW87 datasheet(3/11 Pages) PHILIPS

3 / 11 page

August 1986

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLW87

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE = 0)

peak value

VCESM

max.

36 V

Collector-emitter voltage (open base)

VCEO

max.

18 V

Emitter-base voltage (open collector)

VEBO

max.

4 V

Collector current (average)

IC(AV)

max.

6 A

Collector current (peak value); f

> 1 MHz

ICM

max.

12 A

R.F. power dissipation (f

> 1 MHz); Tmb = 25 °CPrf

max.

76 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

handbook, halfpage

MGP649

110

102

VCE (V)

(A)

Th = 70 °C

Tmb = 25 °C

Fig.3

R.F. power dissipation; VCE ≤ 16,5 V; f ≥ 1 MHz.

handbook, halfpage

100

150

100

MGP650

Prf

(W)

Th (°C)

continuous

d.c. operation

derate by

0.32 W/K

continuous

r.f. operation

derate by

0.42 W/K

short-time

operation

during mismatch

THERMAL RESISTANCE

(dissipation = 20 W; Tmb =76 °C; i.e. Th =70 °C)

From junction to mounting base (d.c. dissipation)

Rth j-mb(dc)

3,0 K/W

From junction to mounting base (r.f. dissipation)

Rth j-mb(rf)

2,25 K/W

From mounting base to heatsink

Rth mb-h

0,3 K/W

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