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STTH3012W Datasheet(PDF) 2 Page - STMicroelectronics

Part # STTH3012W
Description  Ultrafast recovery - 1200 V diode
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH3012W Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH3012
2/9
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.60 x IF(AV) + 0.012 IF
2
(RMS)
Table 1.
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
IF(RMS)
RMS forward current
50
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 105° C
30
A
IFRM
Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
300
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
210
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
0.95
°C/W
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25° C
VR = VRRM
20
µA
Tj = 125° C
15
150
VF
(2)
Forward voltage drop
Tj = 25° C
IF = 25 A
2.1
V
Tj = 125° C
1.25
1.9
Tj = 150° C
1.20
1.8
Tj = 25° C
IF = 30 A
2.25
Tj = 125° C
1.35
2.05
Tj = 150° C
1.30
1.95
1.
Pulse test: tp = 5 ms, δ < 2 %
2.
Pulse test: tp = 380 µs, δ < 2 %



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