Philips Semiconductors

Product specification

Breakover diodes

BRS212 series

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-sp

Thermal resistance junction to

-

-

25

K/W

solder point

R

th j-a

Thermal resistance junction to

pcb mounted; minimum footprint

-

100

-

K/W

ambient

Z

th j-a

Thermal impedance junction to

t

-

2.6

-

K/W

ambient

ELECTRICAL CHARACTERISTICS

T

TYPE

PARAMETER

Marking

Avalanche

Breakover

Off-state current

Critical rate of

voltage

voltage

rise of off-state

voltage

Conditions

I

I

T

T

t

RH

≤ 65%

Symbol

V

BR

V

BO

I

dV

Limits

min

typ

typ

max

max

max

Units

VVVV

µAV

V/

µsV

BRS212-140

212-140

123

140

140

157

10

105

2000

105

BRS212-160

212-160

140

160

160

180

10

120

2000

120

BRS212-180

212-180

158

180

180

202

10

135

2000

135

BRS212-200

212-200

176

200

200

224

10

150

2000

150

BRS212-220

212-220

193

220

220

247

10

165

2000

165

BRS212-240

212-240

211

240

240

269

10

180

2000

180

BRS212-260

212-260

228

260

260

292

10

195

2000

195

BRS212-280

212-280

246

280

280

314

10

210

2000

210

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

T

On-state voltage

I

-

-

2.5

V

I

H

Holding current

1

T

150

-

-

mA

T

100

-

-

mA

I

S

Switching current

2

t

10

200

1000

mA

S

(BR)

Temperature coefficient of

-

+0.1

-

%/K

avalanche voltage

C

j

Junction capacitance

V

-

-

100

pF

1 The minimum current at which the diode will remain in the on-state

2 The avalanche current required to switch the diode to the on-state.

January 1997

2

Rev 1.000