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FKBA6901 Datasheet(PDF) 2 Page - FETek Technology Corp. |
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FKBA6901 Datasheet(HTML) 2 Page - FETek Technology Corp. |
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2 / 7 page ![]() FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : B FKBA6901 N-Ch and P-Ch Fast Switching MOSFETs 22 Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=15A --- --- 32 m VGS=4.5V , ID=10A --- --- 38 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 17 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Qg Total Gate Charge (4.5V) VDS=48V , VGS=4.5V , ID=12A --- 12.56 --- nC Qgs Gate-Source Charge --- 3.24 --- Qgd Gate-Drain Charge --- 6.31 --- Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=3.3 , ID=10A --- 8 --- ns Tr Rise Time --- 14.2 --- Td(off) Turn-Off Delay Time --- 24.4 --- Tf Fall Time --- 4.6 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1378 --- pF Coss Output Capacitance --- 86 --- Crss Reverse Transfer Capacitance --- 64 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 23 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=23A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics |
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