BSH202 datasheet(2/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

P-channel enhancement mode

BSH202

MOS transistor

ELECTRICAL CHARACTERISTICS

j= 25˚C

unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

(BR)DSS

Drain-source breakdown

GS = 0 V; ID = -10 µA

-30

voltage

GS(TO)

Gate threshold voltage

DS = VGS; ID = -1 mA

-1

-1.9

j = 150˚C

-0.4

DS(ON)

Drain-source on-state

GS = -10 V; ID = -280 mA

0.63

0.9

Ω

resistance

GS = -4.5 V; ID = -140 mA

0.89

1.35

Ω

GS = -10 V; ID = -280 mA; Tj = 150˚C

0.95

1.35

Ω

Forward transconductance

DS = -24 V; ID = -280 mA

0.2

0.7

GSS

Gate source leakage current V

GS = ±20 V; VDS = 0 V

±10 ±100

DSS

Zero gate voltage drain

DS = -24 V; VGS = 0 V;

-50

-100

current

j = 150˚C

-0.4

-10

µA

g(tot)

Total gate charge

D = -0.3 A; VDD = -15 V; VGS = -10 V

2.9

Gate-source charge

0.4

Gate-drain (Miller) charge

0.5

d on

Turn-on delay time

DD = -15 V; ID = -0.5 A;

Turn-on rise time

GS = -10 V; RG = 6 Ω

4.5

d off

Turn-off delay time

Resistive load

Turn-off fall time

iss

Input capacitance

GS = 0 V; VDS = -24 V; f = 1 MHz

oss

Output capacitance

rss

Feedback capacitance

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Continuous reverse drain

a = 25 ˚C

-0.56

current

DRM

Pulsed reverse drain current

-2.2

Diode forward voltage

F = -0.5 A; VGS = 0 V

-0.87

-1.3

Reverse recovery time

F = -0.5 A; -dIF/dt = 100 A/µs;

Reverse recovery charge

GS = 0 V; VR = -24 V

August 1998

Rev 1.000

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