1999 Apr 06

2

Philips Semiconductors

Objective specification

Dual N-channel enhancement mode MOS transistor

BSH301

FEATURES

• 40 mΩ on-state resistance at 2.5 V gate drive

• ESD gate protection.

APPLICATIONS

• Li-Ion safety switch

• Power management.

DESCRIPTION

Two N-channel enhancement mode MOS transistors in an

8-pin plastic TSSOP8 package.

PINNING SOT530 (TSSOP8)

PIN

SYMBOL

DESCRIPTION

1

d1

drain 1

2

s1

source 1

3

s1

source 1

4

g1

gate 1

5

g2

gate 2

6

s2

source 2

7

s2

source 2

8

d1

drain 1

CAUTION

The device is supplied in an antistatic package. The gate

inputs must be protected against static discharge during

transport or handling.

Fig.1 Simplified outline (SOT530) and symbol.

handbook, halfpage

MAM423

1

4

8

5

d1 s2 s2

g2

d1 s1 s1

g1

QUICK REFERENCE DATA

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−

20

V

source-drain diode forward voltage

−

1V

gate-source voltage (DC)

−±8V

gate-source threshold voltage

0.4

−

V

drain current (DC)

−

5A

drain-source on-state resistance

−

0.04

Ω

total power dissipation

−

1.75

W

Full Data Sheet will appear: on WWW (Internet; details in front section/back of this HB/CD-ROM) or updated Loose leaf