1997 Jun 18

2

Philips Semiconductors

Product specification

N-channel enhancement mode

vertical D-MOS transistor

BSN20

FEATURES

• Direct interface to C-MOS, TTL, etc.

• High-speed switching

• No secondary breakdown.

APPLICATIONS

• Thin and thick film circuits

• General purpose fast switching applications.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor

in a SOT23 SMD package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT23

PIN

SYMBOL

DESCRIPTION

1

g

gate

2

s

source

3

d

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

s

d

g

MAM273

2

1

3

Top view

Marking code: M8p.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

drain-source voltage (DC)

50

V

drain current (DC)

100

mA

drain-source on-state resistance

15

Ω

gate-source threshold voltage

1.8

V