BSP128 datasheet(3/8 Pages) PHILIPS

3 / 8 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP128

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

ID = 10 µA; VGS = 0

200

−−

IDSS

drain-source leakage current

VDS = 160 V; VGS = 0

−−

µA

±I

GSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

100

VGS(th)

gate-source threshold voltage

ID = 1 mA; VGS = VDS

0.4

−

1.8

RDS(on)

drain-source on-resistance

ID = 100 mA; VGS = 2.8 V

−

Ω

 Y

fs

transfer admittance

ID = 300 mA; VDS = 25 V

200

400

−

Ciss

input capacitance

VDS = 25 V; VGS = 0; f = 1 MHz −

Coss

output capacitance

VDS = 25 V; VGS = 0; f = 1 MHz −

Crss

feedback capacitance

VDS = 25 V; VGS = 0; f = 1 MHz −

510

Switching times (see Figs 2 and 3)

ton

turn-on time

ID = 250 mA; VDD = 50 V;

VGS = 0 to 10 V

−

510

toff

turn-off time

ID = 250 mA; VDD = 50 V;

VGS = 0 to 10 V

−

Fig.2 Switching times test circuit.

VDD =50V.

handbook, halfpage

MBB691

Ω

VDD = 50 V

10 V

0 V

Fig.3 Input and output waveforms.

handbook, halfpage

MBB692

10 %

90 %

10 %

ton

toff

OUTPUT

INPUT

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