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74LVC1G58GS Datasheet(PDF) 7 Page - Nexperia B.V. All rights reserved

Part # 74LVC1G58GS
Description  Low-power configurable multiple function gate
PDF  18 Pages
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Manufacturer  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

74LVC1G58GS Datasheet(HTML) 7 Page - Nexperia B.V. All rights reserved

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Nexperia
74LVC1G58
Low-power configurable multiple function gate
Symbol Parameter
Conditions
Min
Typ [1]
Max
Unit
Tamb = -40 °C to +125 °C
VI = VT+ or VT-
IO = 100 μA; VCC = 1.65 V to 5.5 V
-
-
0.1
V
IO = 4 mA; VCC = 1.65 V
-
-
0.7
V
IO = 8 mA; VCC = 2.3 V
-
-
0.45
V
IO = 12 mA; VCC = 2.7 V
-
-
0.6
V
IO = 24 mA; VCC = 3.0 V
-
-
0.8
V
VOL
LOW-level output voltage
IO = 32 mA; VCC = 4.5 V
-
-
0.8
V
VI = VT+ or VT-
IO = -100 μA; VCC = 1.65 V to 5.5 V
VCC - 0.1
-
-
V
IO = -4 mA; VCC = 1.65 V
0.95
-
-
V
IO = -8 mA; VCC = 2.3 V
1.7
-
-
V
IO = -12 mA; VCC = 2.7 V
1.9
-
-
V
IO = -24 mA; VCC = 3.0 V
2.0
-
-
V
VOH
HIGH-level output voltage
IO = -32 mA; VCC = 4.5 V
3.4
-
-
V
II
input leakage current
VI = 5.5 V or GND; VCC = 0 V to 5.5 V
-
-
±1
μA
IOFF
power-off leakage current
VI or VO = 5.5 V; VCC = 0 V
-
-
±2
μA
ICC
supply current
VI = 5.5 V or GND; VCC = 1.65 V to 5.5 V;
IO = 0 A
-
-
4
μA
ΔICC
additional supply current
VI = VCC - 0.6 V; IO = 0 A;
VCC = 2.3 V to 5.5 V
-
-
500
μA
[1] Typical values are measured at maximum VCC and Tamb = 25 °C.
11. Dynamic characteristics
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 13.
-40 °C to +85 °C
-40 °C to +125 °C
Symbol Parameter
Conditions
Min
Typ [1]
Max
Min
Max
Unit
A, B, C to Y; see Fig. 12
[2]
VCC = 1.65 V to 1.95 V
1.0
6.0
14.4
1.0
18.0
ns
VCC = 2.3 V to 2.7 V
0.5
3.5
8.3
0.5
10.4
ns
VCC = 2.7 V
0.5
4.2
8.5
0.5
10.6
ns
VCC = 3.0 V to 3.6 V
0.5
3.8
6.3
0.5
7.9
ns
tpd
propagation delay
VCC = 4.5 V to 5.5 V
0.5
3.0
5.1
0.5
6.4
ns
CPD
power dissipation
capacitance
VCC = 3.3 V; VI = GND to VCC
[3]
-
20
-
-
-
pF
[1] Typical values are measured at nominal VCC and at Tamb = 25 °C.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC 2 × fi × N + Σ(CL × VCC 2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC 2 × fo) = sum of outputs.
74LVC1G58
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2022. All rights reserved
Product data sheet
Rev. 11 — 1 February 2022
7 / 18



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