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BSP204 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BSP204 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() April 1995 6 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP204; BSP204A Fig.6 Typical transfer characteristic; −VDS = 10 V; Tj = 25 °C. handbook, halfpage 0 −10 −1 0 −0.2 −0.4 −0.6 −0.8 −2 −4 −6 ID (A) −8 MDA707 VGS (V) Fig.7 Typical on-resistance as a function of drain current; Tj = 25 °C. handbook, halfpage 28 8 12 ID (mA) RDSon (Ω) 16 20 24 −103 −102 −10 MDA708 VGS = −10 V −5 V −4 V Fig.8 Typical capacitances as a function of drain-source voltage; VGS = 0; f = 1 MHz; Tj = 25 °C. handbook, halfpage 0 120 160 80 40 0 −5 −10 −25 −20 −15 MDA734 C (pF) VDS (V) Crss Ciss Coss Fig.9 Temperature coefficient of drain-source on-resistance; typical RDS(on) at −200 mA/−10 V. k R DS on () at Tj R DS on () at 25 °C ---------------------------------------------- ; = handbook, halfpage −50 0 50 k Tj (°C) 150 2.5 0 2 100 1.5 1 0.5 MDA710 |
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