BC807DS datasheet(3/8 Pages) PHILIPS

3 / 8 page

2002 Nov 22

Philips Semiconductors

Product speciﬁcation

PNP general purpose double transistor

BC807DS

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Notes

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

2. VBE decreases by approximately −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

208

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB = −20 V; IE =0

−−−100

VCB = −20 V; IE = 0; Tj = 150 °C

−−−5

µA

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0

−−−100

hFE

DC current gain

VCE = −1 V; IC = −100 mA; note 1

160

−

400

VCE = −1 V; IC = −500 mA; note 1

−−

VCEsat

collector-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 −−−700

VBE

base-emitter voltage

VCE = −1 V; IC = −500 mA;

notes 1 and 2

−−−1.2

collector capacitance

VCB = −10 V; IE =Ie = 0; f = 1 MHz

−

transition frequency

VCE = −5 V; IC = −10 mA;

f = 100 MHz

−−

MHz

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