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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 2 February 2005

2 of 12

Philips Semiconductors

BFG325/XR

NPN 14 GHz wideband transistor

[1]

[2]

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = p: made in Hong Kong.

5.

Limiting values

|s

2

insertion power gain

-14

-

dB

NF

noise figure

-

1.1

-

dB

Table 1:

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Table 2:

Pinning

Pin

Description

Simplified outline

Symbol

1

collector

2

emitter

3

base

4

emitter

21

4

3

sym086

1

2, 4

3

Table 3:

Ordering information

Type number

Package

Name

Description

Version

BFG325/XR

SC-61AA plastic surface mounted package; reverse pinning;

4 leads

SOT143R

Table 4:

Marking codes

Type number

Marking code [1]

BFG325/XR

S2*

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

15

V

collector-emitter voltage

open base

-

6

V

emitter-base voltage

open collector

-

2

V