BSP230 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Jun 17

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP230

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Device mounted on an epoxy printed-circuit board, 40

× 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−300

VGSO

gate-source voltage (DC)

open drain

−±20

drain current (DC)

−−210

IDM

peak drain current

−−0.75

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

1.5

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

83.3

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = −10 µA

−300

−−

VGSth

gate-source threshold voltage

VDS =VGS; ID = −1mA

−1.7

−−2.55 V

IDSS

drain-source leakage current

VGS = 0; VDS = −240 V

−−−100

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−±100

RDSon

drain-source on-state resistance

VGS = −10 V; ID = −170 mA

−−

Ω

yfs

forward transfer admittance

VDS = −25 V; ID = −170 mA

100

−−

Ciss

input capacitance

VGS = 0; VDS = −25 V; f = 1 MHz −

Coss

output capacitance

VGS = 0; VDS = −25 V; f = 1 MHz −

Crss

reverse transfer capacitance

VGS = 0; VDS = −25 V; f = 1 MHz −

515

Switching times (see Figs 2 and 3)

ton

turn-on time

VGS =0to −10 V; VDD = −50 V;

ID = −250 mA

−

510

toff

turn-off time

VGS = −10 to 0 V; VDD = −50 V;

ID = −250 mA

−

BSP230 Datasheet(PDF) 3 Page - NXP Semiconductors

BSP230 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL