IXFR34N80 datasheet(1/2 Pages) IXYS

Part #	IXFR34N80

Description	Single MOSFET Die Avalanche Rated

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C (MOSFET chip capability)

28

A

I

DM

T

C

= 25

°C, Note 1

600

A

I

AR

T

C

= 25

°C

150

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

Weight

5

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3mA

150

V

GS(th)

V

DS = VGS, ID = 8mA

2.0

4.0 V

I

GSS

V

GS = ±20 V, VDS = 0

±100 nA

I

DSS

V

DS = VDSS

T

J

= 25

°C

100

µA

V

GS = 0 V

T

J

= 125

°C

2 mA

R

DS(on)

V

GS = 10 V, ID = IT

0.24

Ω

Notes 2, 3

Single MOSFET Die

Avalanche Rated

98674A (02/00)

ISOPLUS 247TM

HiPerFETTM Power MOSFETs

ISOPLUS247TM

(Electrically Isolated Backside)

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l Low drain to tab capacitance(<25pF)

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Unclamped Inductive Switching (UIS)

rated

l Fast intrinsic Rectifier

Applications

l DC-DC converters

l Battery chargers

l Switched-mode and resonant-mode

power supplies

l DC choppers

l AC motor control

Advantages

l Easy assembly

l Space savings

l High power density

G = Gate

D = Drain

S = Source

* Patent pending

IXFR 34N80

V

DSS

= 800

V

I

D25

=

28

A

R

DS(on) = 0.24

Ω

t

rr ≤

≤≤≤≤ 250 ns

E153432

Isolated backside*

G

D

S

Preliminary Data Sheet

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