BSP61 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 29

Philips Semiconductors

Product speciﬁcation

PNP Darlington transistors

BSP60; BSP61; BSP62

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to solder point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICES

collector cut-off current

BSP60

VBE = 0; VCE = −45 V

−−−50

BSP61

VBE = 0; VCE = −60 V

−−−50

BSP62

VBE = 0; VCE = −80 V

−−−50

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−−50

hFE

DC current gain

VCE = −10 V; note 1; see Fig.2

IC = −150 mA

1000

−−

IC = −500 mA

2000

−−

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −0.5 mA

−−−1.3

IC = −500 mA; IB = −0.5 mA;

Tj = 150 °C

−−−1.3

VBEsat

base-emitter saturation voltage

IC = −500 mA; IB = −0.5 mA

−−−1.9

transition frequency

IC = −500 mA; VCE = −5V;

f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels); see Fig.3

ton

turn-on time

ICon = −500 mA; IBon = −0.5 mA;

IBoff = 0.5 mA

−

400

−

toff

turn-off time

−

1500

−

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