1997 Apr 21

2

Philips Semiconductors

Product specification

NPN high-voltage transistors

BSR19; BSR19A

FEATURES

• Low current (max. 300 mA)

• High voltage (max. 160 V).

APPLICATIONS

• General purpose switching and amplification

• Especially used for telephony applications.

DESCRIPTION

NPN high-voltage transistor in a SOT23 plastic package.

PNP complements: BSR20 and BSR20A.

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM255

Top view

2

3

1

MARKING

TYPE NUMBER

MARKING CODE

BSR19

U35

BSR19A

U36

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSR19

−

160

V

BSR19A

−

180

V

collector-emitter voltage

open base

BSR19

−

140

V

BSR19A

−

160

V

peak collector current

−

600

mA

total power dissipation

−

250

mW

DC current gain

BSR19

60

−

BSR19A

80

−

transition frequency

100

300

MHz