1999 Apr 28

2

Philips Semiconductors

Product specification

NPN medium power transistors

BSR40; BSR41; BSR42; BSR43

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

APPLICATIONS

• Thick and thin-film circuits

• Telephony and general industrial applications.

DESCRIPTION

NPN medium power transistor in a SOT89 plastic

package. PNP complements: BSR30; BSR3 and BSR33.

MARKING

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

BSR40

AR1

BSR42

AR3

BSR41

AR2

BSR43

AR4

PINNING

PIN

DESCRIPTION

1

emitter

2

collector

3

base

Fig.1 Simplified outline (SOT89) and symbol.

handbook, halfpage

123

Bottom view

MAM296

3

2

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSR40; BSR41

−

70

V

BSR42; BSR43

−

90

V

collector-emitter voltage

open base

BSR40; BSR41

−

60

V

BSR42; BSR43

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

2A

peak base current

−

0.2

A

total power dissipation

−

1.35

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C