Rev. 0, DECEMBER 2021

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The information in this document is subject to change without notice.

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C6D08065Q

Package Types: QFN 8x8

Marking: C6D08065Q

Features

• Low Forward Voltage (V

F) Drop with Positive

Temperature Coefficient

• Zero Reverse Recovery Current / Forward

Recovery Voltage

• Temperature-Independent Switching Behavior

• Low Profile Package with Low Inductance

Applications

• Enterprise Power, Server, & Telecom

Power Supplies

• Switched Mode Power Supplies

• Industrial Power Supplies

• Boost Power Factor Correction

• Bootstrap Diode

• LLC Clamping

6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Maximum Ratings (T

C = 25°C Unless Otherwise Specified)

Parameter

Symbol

Value

Unit

Test Conditions

Notes

Repetitive Peak Reverse Voltage

V

RRM

650

V

DC Blocking Voltage

V

DC

650

Continuous Forward Current

I

F

28

A

T

J = 25 °C

Fig. 3

14

T

J = 125 °C

8

T

J = 155 °C

Non-Repetitive Peak Forward

Surge Current

I

FSM

55

T

C = 25 °C, tp = 10 ms, Half Sine Wave

51

T

C = 110 °C, tp = 10 ms, Half Sine Wave

Power Dissipation

P

tot

83

W

T

J = 25 °C

Fig. 4

36

T

J = 110 °C

i2t Value

∫ i2t

15

A2s

T

C = 25 °C, tp = 10 ms

13

T

C = 110 °C, tp = 10 ms