FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKD3016

N-Ch 30V Fast Switching MOSFETs

22

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.0213

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V , ID=30A

---

3.4

4

m



VGS=4.5V , ID=15A

---

5.2

6

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

1.5

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-5.73

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=24V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=30A

---

26.5

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.4

2.8



Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=15A

---

31.6

---

nC

Qgs

Gate-Source Charge

---

8.6

---

Qgd

Gate-Drain Charge

---

11.7

---

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V , RG=3.3

ID=15A

---

9

---

ns

Tr

Rise Time

---

19

---

Td(off)

Turn-Off Delay Time

---

58

---

Tf

Fall Time

---

15.2

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

3075

4000

pF

Coss

Output Capacitance

---

400

530

Crss

Reverse Transfer Capacitance

---

315

---

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

1,5

VG=VD=0V , Force Current

---

---

96

A

ISM

Pulsed Source Current

2,5

---

---

192

A

VSD

Diode Forward Voltage

2

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

IF=30A , dI/dt=100A/µs ,

TJ=25℃

---

18

---

nS

Qrr

Reverse Recovery Charge

---

8

---

nC

Note :

1.The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A

4.The power dissipation is limited by 175℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Diode Characteristics

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)