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BSS192 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BSS192
Description  P-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSS192 Datasheet(HTML) 2 Page - NXP Semiconductors

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1997 Jun 20
2
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS192
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.
APPLICATIONS
• Line current interrupter in telephone sets
• Relay, high-speed and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
PINNING - SOT89
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate
Fig.1 Simplified outline and symbol.
Marking code: KB
handbook, halfpage
12
3
MAM354
s
Bottom view
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VDS
drain-source voltage (DC)
−240
V
VGSth
gate-source threshold voltage
ID = −1 mA; VGS =VDS
−2.8
V
ID
drain current (DC)
−150
mA
RDSon
drain-source on-state resistance
ID = −100 mA; VGS = −10 V
20
Ω



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