BSS52 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Sep 03

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BSS50; BSS51; BSS52

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

ICES

collector cut-off current

BSS50

VBE = 0; VCE =45V

−−

BSS51

VBE = 0; VCE =60V

−−

BSS52

VBE = 0; VCE =80V

−−

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

hFE

DC current gain

VCE =10V

IC = 150 mA

1000

−−

IC = 500 mA

2000

−−

VCEsat

collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA

−−

1.3

IC = 500 mA; IB = 0.5 mA; Tj = 200 °C

−−

1.3

VCEsat

collector-emitter saturation voltage

BSS51

IC = 1 A; IB =1mA

−−

1.6

IC = 1 A; IB = 1 mA; Tj = 200 °C

−−

2.3

VCEsat

collector-emitter saturation voltage

BSS50; BSS52

IC = 1 A; IB =4mA

−−

1.6

IC = 1 A; IB = 4 mA; Tj = 200 °C

−−

1.6

VBEsat

base-emitter saturation voltage

IC = 500 mA; IB = 0.5 mA

−−

1.9

VBEsat

base-emitter saturation voltage

BSS51

IC = 1 A; IB =1mA

−−

2.2

BSS50; BSS52

IC = 1 A; IB =4mA

−−

2.2

VBEon

base-emitter on-state voltage

IC = 150 mA; VCE = 10 V

1.3

−

1.65

IC = 500 mA; VCE = 10 V

1.4

−

1.75

transition frequency

IC = 500 mA; VCE = 5 V; f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA

−

0.5

−µs

ICon = 1 A; IBon = 1 mA; IBoff = −1mA

−

0.4

−µs

toff

turn-off time

ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA

−

1.3

−µs

ICon = 1 A; IBon = 1 mA; IBoff = −1mA

−

1.5

−µs

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