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BSS84 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BSS84 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1997 Jun 18 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interrupter in telephone sets • Relay, high speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT23 SMD package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 g gate 2 s source 3 d drain Fig.1 Simplified outline and symbol. Marking code: SP handbook, halfpage 2 1 3 Top view MAM188 s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −−50 V VGSO gate-source voltage (DC) open drain −±20 V VGSth gate-source threshold voltage ID = −1 mA; VDS =VGS −0.8 −2V ID drain current (DC) −−130 mA RDSon drain-source on-state resistance ID = −130 mA; VGS = −10 V − 10 Ω Ptot total power dissipation Tamb ≤ 25 °C − 250 mW |
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