1999 Apr 26

3

Philips Semiconductors

Product specification

NPN Darlington transistors

BST50; BST51; BST52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BST50

−

60

V

BST51

−

80

V

BST52

−

90

V

collector-emitter voltage

BST50

−

45

V

BST51

−

60

V

BST52

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

0.5

A

peak collector current

−

1.5

A

base current (DC)

−

100

mA

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C