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BST76 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BST76
Description  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BST76 Datasheet(HTML) 5 Page - NXP Semiconductors

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1997 Jun 20
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BST76A
Fig.6 Output characteristics; typical values.
Tj =25 °C.
(1) VGS =10V.
(2) VGS =5V.
(3) VGS =4V.
(4) VGS =3V.
handbook, halfpage
0
(1)
(2)
(3)
(4)
10
1
0
VDS (V)
ID
(A)
0
.2
0
.4
0
.6
0
.8
24
6
8
MDA164
Fig.7 Transfer characteristic; typical values.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
010
1
0
VGS (V)
ID
(A)
0
.2
0
.4
0
.6
0
.8
24
6
8
MDA170
Fig.8
Drain current as a function of drain-source
on-state resistance; typical values.
Tj =25 °C.
(1) VGS =10V.
(2) VGS =5V.
(3) VGS =4V.
handbook, halfpage
14
4
ID
(mA)
RDSon (Ω)
6
8
10
12
103
102
10
MDA169
(1)
(2)
(3)
Fig.9
Temperature coefficient of gate-source
threshold voltage; typical values.
VGSth at 0.1 mA.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
handbook, halfpage
−50
1.2
1
0.8
0.6
k
0
50
150
100
MDA167
Tj (
oC)



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