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Rev. 18, March 2023

CSD01060A

Package Types: TO-220-2

Marking: CSD01060A

Features

• Low Forward Voltage (V

F) Drop with Positive

Temperature Coefficient

• Zero Reverse Recovery Current / Forward

Recovery Voltage

• Temperature-Independent Switching Behavior

Applications

• Industrial Switched Mode Power Supplies

• Uninterruptible & AUX Power Supplies

• Boost for PFC & DC-DC Stages

• Solar Inverters

Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Maximum Ratings (T

C = 25°C Unless Otherwise Specified)

Parameter

Symbol

Value

Unit

Test Conditions

Notes

Repetitive Peak Reverse Voltage

V

RRM

600

V

DC Blocking Voltage

V

DC

600

Continuous Forward Current

I

F

4

A

T

J = 25 °C

Fig. 3

2

T

J = 135 °C

1

T

J = 158 °C

Repetitive Peak Forward Surge

Current

I

FRM

7

T

C = 25 °C, tp = 10 ms, Half Sine Wave

5.5

T

C = 110 °C, tp = 10 ms, Half Sine Wave

Non-Repetitive Forward Surge

Current

I

FSM

9

T

C = 25 °C, tp = 1.5 ms, Half Sine Wave

Fig. 8

Non-Repetitive Peak Forward

Surge Current

I

F,Max

32

T

C = 25 °C, tp = 10 µs, Pulse

Power Dissipation

P

tot

21.4

W

T

J = 25 °C

Fig. 4

7.1

T

J = 125 °C

600 V, 1 A Silicon Carbide Schottky Diode