BSV52 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BSV52

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−−

400

IE = 0; VCB =20V; Tj = 125 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

100

hFE

DC current gain

VCE =1V

IC = 1 mA

−−

IC =10mA

−

120

IC =50mA

−−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 300 µA

−−

300

IC = 10 mA; IB =1mA

−−

250

IC = 50 mA; IB =5mA

−−

400

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 1 mA

700

−

850

IC = 50 mA; IB =5mA

−−

1.2

collector capacitance

IE =ie = 0; VCB =5V; f=1MHz

−−

4pF

emitter capacitance

IC =ic = 0; VEB = 1 V; f = 1 MHz

−−

4.5

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz 400

500

−

MHz

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

ICon = 10 mA; IBon = 3 mA;

IBoff = −1.5 mA

−−

delay time

−−

4ns

rise time

−−

6ns

toff

turn-off time

−−

storage time

−−

fall time

−−

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