2SJ649 datasheet(2/8 Pages) NEC

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Data Sheet D16332EJ1V0DS

2SJ649

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics

Symbol

Test Condtions

MIN.

TYP.

MAX.

Unit

Zero Gate Voltage Drain Current

IDSS

VDS = –60 V, VGS = 0 V

–10

µA

Gate Leakage Current

IGSS

VGS =

m 20 V, VDS = 0 V

m 10

µA

Gate Cut-off Voltage

VGS(off)

VDS = –10 V, ID = –1 mA

–1.5

–2.0

–2.5

Forward Transfer Admittance

Note

| yfs |VDS = –10 V, ID = –10 A

RDS(on)1

VGS = –10 V, ID = –10 A

Ω

Drain to Source On-state Resistance

Note

RDS(on)2

VGS = –4.0 V, ID = –10 A

Ω

Input Capacitance

Ciss

VDS = –10 V

1900

Output Capacitance

Coss

VGS = 0 V

350

Reverse Transfer Capacitance

Crss

f = 1 MHz

140

Turn-on Delay Time

td(on)

VDD = –30 V, ID = –10 A

Rise Time

VGS = –10 V

Turn-off Delay Time

td(off)

RG = 0

Ω

Fall Time

Total Gate Charge

VDD = –48 V

Gate to Source Charge

QGS

VGS = –10 V

Gate to Drain Charge

QGD

ID = –20 A

Body Diode Forward Voltage

Note

VF(S-D)

IF = 20 A, VGS = 0 V

0.95

Reverse Recovery Time

trr

IF = 20 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A/

µs

100

Note Pulsed: PW

≤ 350

µs, Duty Cycle ≤ 2%

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25

Ω

VDD

VGS = –20

→ 0 V

BVDSS

IAS

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

VGS (

−)

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

VGS

Wave Form

VDS

Wave Form

VGS (

−)

10%

90%

10%

VDS (

−)

90%

td(on)

td(off)

10%

VDS

ton

toff

PG.

Ω

D.U.T.

VDD

IG =

−2 mA

−

VGS

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