GTRA184602FC-V1-R2 datasheet(1/9 Pages) WOLFSPEED

Part #	GTRA184602FC-V1-R2

Description	Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	WOLFSPEED [WOLFSPEED, INC.]

Direct Link	https://www.wolfspeed.com/

Logo

1 / 9 page

Rev. 03, 2023-03-02

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

Package Types: H-37248C-4

Thermally-Enhanced High Power RF GaN on SiC HEMT

460 W, 48 V, 1805 – 1880 MHz

Description

The GTRA184602FC is a 460-watt (P

3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular

power amplifier applications. It features input matching, high

efficiency, and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetric Doherty design

- Main: P3dB = 160 W Typ

- Peak: P3dB = 300 W Typ

• Typical pulsed CW performance: 48 V, 1845 MHz,

16µsec pulse width, 10% duty cycle

(Doherty configuration)

- Output Power: 460 W @ P3dB

- Efficiency: 62% @ P

OUT = 49 dBm

- Gain: 16 dB @ P

OUT = 49 dBm

• Capable of handling 10:1 VSWR @48 V, 80 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

GTRA184602FC

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

V

DD = 48 V, IDQ = 150 mA, POUT = 80 W avg, VGS(PEAK) = –5.5 V, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

14

15.5

—

dB

Drain Efficiency

h

D

54.5

60

—

%

Adjacent Channel Power Ratio

ACPR

—

–27.5

–24.5

dBc

Output PAR @ 0.01% CCDF

OPAR

7.1

7.8

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-80

-60

-40

-20

0

20

40

60

80

0

5

10

15

20

25

30

35

40

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN)= 150 mA,

VGS(PEAK) = –5.5 V, ƒ = 1875 MHz,

3GPP WCDMA signal, 10 dB PAR

3.84 MHz bandwidth

Gain

Efficiency

PAR @

0.01% CCDF

g184602fc-gr1a

Similar Part No. - GTRA184602FC-V1-R2

Manufacturer	Part #	Datasheet	Description
Cree, Inc	GTRA214602FC	321Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT
WOLFSPEED, INC.	GTRA214602FC	522Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27
	GTRA214602FC-V1	522Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27
	GTRA214602FC-V1-R0	522Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27
	GTRA214602FC-V1-R2	522Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz Rev. 02.1, 2022-1-27

More results

Similar Description - GTRA184602FC-V1-R2

Manufacturer	Part #	Datasheet	Description
Cree, Inc	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTVA220701FA	581Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTVA220701FA_V1	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA220701FA	736Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

More results

GTRA184602FC-V1-R2 Datasheet(PDF) 1 Page - WOLFSPEED, INC.

GTRA184602FC-V1-R2 Datasheet(HTML) 1 Page - WOLFSPEED, INC.

Similar Part No. - GTRA184602FC-V1-R2

Similar Description - GTRA184602FC-V1-R2

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL