2SD2402 datasheet(2/6 Pages) NEC

Part #	2SD2402

Description	NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PDF	6 Pages

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Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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Data Sheet D16155EJ2V0DS

2SD2402

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 50 V, IE = 0

100

Emitter cutoff current

IEBO

VEB = 6.0 V, IC = 0

100

DC current gain

hFE1

VCE = 1.0 V, IC = 1.0 A

−

DC current gain

hFE2

VCE = 1.0 V, IC = 2.0 A

100

200

400

−

DC base voltage

VBE

VCE = 1.0 V, IC = 0.1 A

600

650

700

Collector saturation voltage

VCE(sat)1

IC = 3.0 V, IB = 0.15 A

140

300

Collector saturation voltage

VCE(sat)2

IC = 5.0 V, IB = 0.25 A

230

500

Base saturation voltage

VBE(sat)

IC = 3.0 V, IB = 0.15 A

0.88

1.2

Gain bandwidth product

VCE = 10 V, IE =

−0.5 A

170

MHz

Output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

Turn-on time

ton

275

Storage time

tstg

485

Fall time

IC = 2.0 A, VCC= 10 V

IB1 =

−IB2 = 0.1 A

RL = 500

Ω

hFE CLASSIFICATION

Marking

hFE2

100 to 200

160 to 320

200 to 400

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