2SC2714 datasheet(1/4 Pages) DGNJDZ

Part #	2SC2714

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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1 / 4 page

2SC2714 TRANSISTOR (NPN)

FEATURES

Small reverse Transfer Capacitance:Cre=0.7pF(typ.)

Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA,IC=0

4

V

Collector cut-off current

ICBO

VCB=18V,IE=0

0.5

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.5

μA

DC current gain

hFE

VCE=6V,IC=1mA

40

200

Transition frequency

fT

VCE=6V,IC=1mA

550

MHz

Reverse Transfer capacitance

Cre

VCB=6V,IE=0,f=1MHz

0.7

pF

Noise figure

NF

VCE=6V,Ic=1mA,f=100MHZ

2.5

5

dB

CLASSIFICATION OF hFE

Rank

R

O

Y

Range

40-80

70-140

100-200

Marking

QR

QO

QY

SOT-23

1.

BASE

2.

EMITTER

3.

COLLECTOR

℃

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current -Continuous

20

mA

PC

Collector Power Dissipation

100

mW

Operation Junction and

Storage Temperature Range

TJ,Tstg

-55

~+150

℃

RθJA

Thermal Resistance

from Junction to

Ambient

1000

℃/W

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

1/4

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