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2SC4272 Datasheet(PDF) 1 Page - Nanjing International Group Co

Part # 2SC4272
Description  SOT-89-3L Plastic-Encapsulate Transistors
PDF  3 Pages
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Manufacturer  DGNJDZ [Nanjing International Group Co]
Direct Link  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

2SC4272 Datasheet(HTML) 1 Page - Nanjing International Group Co

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SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
2SC4272
TRANSISTOR (NPN)
FEATURES
Small Flat Package
Large Current Capacity
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
75
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
5
V
Collector cut-off current
ICBO
VCB=40V,IE=0
1
µA
Emitter cut-off current
IEBO
VEB=4V,IC=0
1
µA
DC current gain
hFE
VCE=5V, IC=500mA
60
320
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=50mA
1.2
V
Transition frequency
fT
VCE=10V,IC=50mA
180
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
15
pF
CLASSIFICATION OF
hFE
RANK
D
E
F
RANGE
60–120
100–200
160-320
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
75
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
500
mW
RθJA
Thermal Resistance From Junction To Ambient
250
℃/W
Operation Junction and Storage Temperature Range
℃
TJ,Tstg
-55~+150
MARKING
CH
SOT-89-3L Plastic-Encapsulate Transistors
DONGGUAN NANJING ELECTRONICS LTD.,
1/3
Dongguan Nanjing Electronics Ltd.
www.dgnjdz.com


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