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IRFG5210 Datasheet(PDF) 2 Page - International Rectifier

Part # IRFG5210
Description  200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
PDF  12 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFG5210 Datasheet(HTML) 2 Page - International Rectifier

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IRFG5210
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
0.63
ISM
Pulse Source Current (Body Diode) ➀
—
—
2.5
VSD
Diode Forward Voltage
—
—
1.5
V
Tj = 25°C, IS = 0.68A, VGS = 0V ➃
trr
Reverse Recovery Time
—
—
110
nS
Tj = 25°C, IF = 0.68A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
—
—
310
nC
VDD ≤ 50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
—
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
—
0.27
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
—
1.6
VGS = 10V, ID = 0.4A
Resistance
—
—
1.83
VGS = 10V, ID = 0.68A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 0.25mA
gfs
Forward Transconductance
0.54
—
S ( )VDS > 15V, IDS = 0.4A ➃
IDSS
Zero Gate Voltage Drain Current
—
—
25
VDS= 160V, VGS= 0V
—
—
250
VDS = 160V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
—
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
—
-100
VGS = -20V
Qg
Total Gate Charge
—
—
9.5
VGS =10V, ID = 0.68A,
Qgs
Gate-to-Source Charge
—
—
1.4
nC
VDS = 100V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
4.3
td(on)
Turn-On Delay Time
—
—
8.7
VDD = 100V, ID = 0.68A,
tr
Rise Time
—
—
2.4
VGS =10V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
—
—
19
tf
Fall Time
—
—
24
LS + LD
Total Inductance
—
10
—
.
Ciss
Input Capacitance
—
140
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
56
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
14
—
nA
➃
nH
ns
µA
Ω
Thermal Resistance (Per Die)
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
—
17
RthJA
Junction-to-Ambient
—
—
90
Typical socket mount
°C/W
—
—
Note: Corresponding Spice and Saber models are available on the G&S Website.
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)



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