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ISCNL457P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNL457P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNL457P FEATURES · Drain Current –ID= 32A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max)@VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 32 A IDM Drain Current-Single Pulsed 128 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature 256 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.49 ℃ /W |
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