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LMH6703MAX Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6703MAX Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 13 page ![]() Electrical Characteristics (Note 2) (Continued) Unless otherwise specified, all limits guaranteed for T J = 25˚C, AV = +2, VS = ±5V, RL = 100 Ω,R F = 560 Ω, SD = Floating. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 8) Typ (Note 7) Max (Note 8) Units TCV OS Input Offset Voltage Average Drift (Note 10) 22 µV/˚C I B Input Bias Current Non-Inverting (Note 9) −7 ±20 ±23 µA Inverting (Note 9) −2 ±35 ±44 TCI B Input Bias Current Average Drift Non-Inverting (Note 10) +30 nA/˚C Inverting (Note 10) −70 V O Output Voltage Range R L = ∞ ±3.3 ±3.45 V R L = 100 Ω ±3.2 ±3.14 ±3.4 PSRR Power Supply Rejection Ratio V S = ± 4.0V to ±6.0V 48 46 52 dB CMRR Common Mode Rejection Ratio V CM = −1.0V to +1.0V 45 44 47 dB I S Supply Current (Enabled) SD = 2V, R L = ∞ 11 12.5 15.0 mA Supply Current (Disabled) SD = 0.8V, R L = ∞ 0.2 0.900 0.935 mA Miscellaneous Performance R IN+ Non-Inverting Input Resistance 1 M Ω R IN− Inverting Input Resistance Output Impedance of Input Buffer 30 Ω C IN Non-Inverting Input Capacitance 0.8 pF R O Output Resistance Closed Loop 0.05 Ω CMVR Input Common Mode Voltage Range CMRR ≥ 40 dB ±1.9 V I O Linear Output Current V IN = 0V, VOUT ≤ ±80 mV ±55 ±90 mA Enable/Disable Performance (Disabled Low) T ON Enable Time 10 ns T OFF Disable Time 10 ns Output Glitch 50 mV PP V IH Enable Voltage SD ≥ V IH 2.0 V V IL Disable Voltage SD ≤ V IL 0.8 V I IH Disable Pin Bias Current, High SD = V + (Note 9) −7 ±70 µA I IL Disable Pin Bias Current, Low SD = 0V (Note 9) −50 −240 −400 µA I OZ Disabled Output Leakage Current V OUT = ±1.8V 0.07 ±25 ±40 µA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables. Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ =TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Note 3: The maximum output current (IOUT) is determined by device power dissipation limitations. Note 4: The maximum power dissipation is a function of TJ(MAX), θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) —TA)/ θJA. All numbers apply for package soldered directly into a 2 layer PC board with zero air flow. Note 5: Human body model: 1.5 k Ω in series with 100 pF. Machine model: 0Ω in series with 200 pF. Note 6: Slew Rate is the average of the rising and falling edges. Note 7: Typical numbers are the most likely parametric norm. Note 8: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC) methods. Note 9: Negative input current implies current flowing out of the device. Note 10: Drift determined by dividing the change in parameter at temperature extremes by the total temperature change. www.national.com 3 |
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