Nexperia

PEMD13

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor (TR2) with negative polarity where applicable

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A; Tamb = 25 °C

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 30 V; IB = 0 A; Tamb = 25 °C

-

-

1

µA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tamb = 25 °C;

Tj = 150 °C

-

-

5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

170

µA

hFE

DC current gain

VCE = 5 V; IC = 10 mA; Tamb = 25 °C

100

-

-

VCEsat

collector-emitter

saturation voltage

IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C

-

-

100

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

-

0.6

0.5

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C

1.3

0.9

-

V

R1

bias resistor 1 (input)

[1]

3.3

4.7

6.1

kΩ

R2/R1

bias resistor ratio

[1]

8

10

12

TR1 (NPN)

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

2.5

pF

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

230

-

MHz

TR2 (PNP)

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

3

pF

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

180

-

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

PEMD13

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

28 December 2022

5 / 13