Nexperia

PEMD30

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A; Tamb = 25 °C

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 30 V; IB = 0 A; Tamb = 25 °C

-

-

1

µA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

-

-

50

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

hFE

DC current gain

VCE = 5 V; IC = 20 mA; Tamb = 25 °C

30

-

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

-

150

mV

R1

bias resistor 1 (input)

[1]

1.54

2.2

2.86

kΩ

TR1 (NPN)

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

2.5

pF

TR2 (PNP)

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

3

pF

[1] See section "Test information" for resistor calculation and test conditions.

IC (mA)

10- 1

102

10

1

006aaa696

200

300

100

400

500

hFE

0

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 3. TR1 (NPN): DC current gain as a function of

collector current; typical values

006aaa697

IC (mA)

10- 1

102

10

1

10- 1

1

VCEsat

(V)

10- 2

(3)

(2)

(1)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 4. TR1 (NPN): Collector-emitter saturation voltage

as a function of collector current; typical values

PEMD30

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

18 January 2023

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