BC808 datasheet(1/3 Pages) DGNJDZ

Part #	BC808

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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1 / 3 page

BC808

TRANSISTOR (PNP)

FEATURES

Suitable for AF-Driver stages and low power output stages

Complement to BC818

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-0.8

A

PC*

Collector Power Dissipation

300

mW

Operation Junction and

Storage Temperature Range

TJ,Tstg

-

55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA, IE=0

-30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-25V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.1

μA

hFE(1)

VCE=-1V, IC=-100mA

100

630

DC current gain

hFE(2)

VCE=-1V, IC=-300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.7

V

Base-emitter voltage

VBE

VCE=-1V, IC=-300mA

-1.2

V

Transition frequency

fT

VCE=-5V, IC=-10mA, f=50MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

12

pF

CLASSIFICATION OF hFE

Rank

16

25

40

Range hFE(1)

100-250

160-400

250-630

Marking

5E

5F

5G

SOT-23

1.

BASE

2.

EMITTER

3.

COLLECTOR

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

1/3

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