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AND8039 Datasheet(PDF) 3 Page - ON Semiconductor |
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AND8039 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 12 page ![]() AND8039/D http://onsemi.com 3 In the MKS system (Europe and elsewhere) Npri [ (Vin(nom)) 4fB max Ac (eq. 2B) where: Bmax is in Teslas (webers/m2) Ac is the core crossectional area in m2 This should be viewed as a nominal–minimum turns–count since adding more turns lowers the operating flux density, which may be counter–intuitive the average electric–based engineer. The reset winding is identical in turns to the primary winding and usually about 3–4 wire gauges smaller than that of the primary winding. It is phased oppositely from the primary so that it can discharge the magnetization energy when the power switch is off. The secondary turns needed for this application is found by realizing that the secondary voltage must provide an output waveform that will have a volt–time average that will create the proper output voltage when presented to the L–C filter. In other words, (DCmaxVout(min)) plus the forward voltage drop of the output rectifier must be greater than the DC output voltage. This can be done by: N sec [ 1.1 Npri (Vout ) Vfwd) Vin(min) DC max (eq. 3) where: DCmax is the maximum duty cycle of the system (<0.5) Vfwd is the nominal forward voltage drop of the rectifier. The 1.1 factor provides a 10 percent margin in the supply’s low voltage dropout point and also provides margin for other variations in the circuit. This secondary should be the main output which would then serve as the reference winding for all of the other secondary windings. One should round the result up to the next integer turn. When determining any additional secondary winding, one must account for each of the forward voltage drops of their respective rectifiers. This can be done by: Nsec(n) [ Nsec(1) (Vout(n) ) Vfwd(n)) (Vsec(1) (eq. 4) ) Vfwd(1)) The accuracy of each of the output voltages must now be considered. Some variation can be gotten by changing the output rectifier technology, otherwise the turns can be adjusted by raising the reference secondary winding by a turn and adjusting the other windings. This is an iterative process done until the output voltages are within an acceptable tolerance and all of the windings are integer turns. This design example only has one output voltage. The auxiliary winding which provides power to the control IC, need not be regulated or accurate. It needs to only exceed the low voltage inhibit limit of the UC3845 which is 8.0 V at the low input voltage. Peak rectifying the auxiliary winding in the forward conduction mode, yields a winding with 3.5 turns. Lets round up to 4 and add a series resistor (about 100 ohms) and a 18 V zener diode across the auxiliary voltage filter capacitor to limit the maximum voltage. This will protect the gate of the power MOSFET. In this example, an EFD25 core will be used. The primary turns were calculated to be 41 turns of a #24 AWG. The reset winding will be 41T of #28 AWG. The secondary is 21 turns of 2 stands of #22 AWG. The auxiliary winding will be 4 turns of #28 AWG. The primary and reset windings will be wound first onto the bobbin. Next the auxiliary winding is wound on top of these windings. Three layers of mylar tape are applied to provide some degree of dielectric isolation (not quite IEC), then the secondary winding will be applied last. A last layer of tape is added to provide some protection to the outer winding. A cautious note must be now conveyed, this design example is a non–isolated, high–voltage input power supply. It is for example only and cannot be built for sale because it does not meet the IEC (UL CSA or other) specifications for dielectric isolation and for creepage (the distance along a surface). To make this an off–line one transistor forward converter, the input rectifier bridge, EMI filter, an opto–isolated feedback circuit, an opto–isolated feedback circuit and the transformer would have to be built to IEC specifications. Selection of the Power Semiconductors Power Switch In one–transistor forward converters, the power switch will see twice the maximum input voltage plus any spikes caused winding leakage inductance, and rectifier forward and reverse characteristics. So the minimum VDSS rating for the power MOSFET is about: VDSS(min) + 2(Vin(max)) ) Vclamp(est) + 450 V The minimum drain current rating should be greater than just slightly less than slightly less than the maximum peak current. This is 2.24 A. Another major consideration, especially for surface mount components, is the heat generated by the device. The RDS(ON) and the drive circuit have the greatest influence on this. By over–rating the drain current, some reduction in heat can be realized. This lessens the amount of PCB area needed to keep the junction temperature of the MOSFET at a reasonable temperature (about +40–+60 °C). A reasonable estimation of the maximum RDS(on) assuming a heatsink area of twice the minimum footprint area is: RDS(on)(max) + 3.3 (DT) (Iin(av))2(Theta (jA)) (eq. 6) |
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