GS66508B datasheet(1/16 Pages) GAN

Part #	GS66508B

Description	Bottom-side cooled 650 V E-mode GaN transistor

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	GAN [GaN Systems Inc.]

Direct Link	https://gansystems.com/

Logo

1 / 16 page

GS66508B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

1

Submit datasheet feedback

Package Outline

Features

•

650 V enhancement mode power transistor

•

Bottom-side cooled configuration

•

RDS(on) = 50 mΩ

•

IDS(max) = 30 A

•

Ultra-low FOM die

•

Low inductance GaNPX® package

•

Simple gate drive requirements (0 V to 6 V)

•

Transient tolerant gate drive (-20 V / +10 V)

•

Very high switching frequency (> 10 MHz)

•

Fast and controllable fall and rise times

•

Reverse conduction capability

•

Zero reverse recovery loss

•

Small 7.0 x 8.4 mm2 PCB footprint

•

Source Sense (SS) pin for optimized gate drive

•

RoHS 3 (6+4) compliant

Applications

•

AC-DC Converters

•

DC-DC Converters

•

Bridgeless Totem Pole PFC

•

Inverters

•

Energy Storage Systems

•

On Board Battery Chargers

•

Uninterruptable Power Supplies

•

Solar Energy

•

Industrial Motor Drives

•

Appliances

•

Laser Drivers

•

Wireless Power Transfer

Description

The GS66508B is an enhancement mode GaN-on-

silicon power transistor. The properties of GaN allow

for high current, high voltage breakdown and high

switching frequency. GaN Systems innovates with

industry leading advancements such as patented

Island Technology® and GaNPX® packaging. Island

Technology® cell layout realizes high-current die and

high yield. GaNPX® packaging enables low inductance

& low thermal resistance in a small package. The

GS66508B is a bottom-side cooled transistor that offers

very low junction-to-case thermal resistance for

demanding high power applications. These features

combine to provide very high efficiency power

switching.

Circuit Symbol

Similar Part No. - GS66508B

Manufacturer	Part #	Datasheet	Description
GaN Systems Inc.	GS66508T	1Mb / 17P	Top-side cooled 650 V E-mode GaN transistor Rev 200402

More results

Similar Description - GS66508B

Manufacturer	Part #	Datasheet	Description
GaN Systems Inc.	GS-065-004-1-L	1Mb / 16P	650 V E-mode GaN transistor Rev 220712
	GS61008P	893Kb / 16P	Bottom-side cooled 100 V E-mode GaN transistor Rev 200402
	GS61008T	1Mb / 17P	Top-side cooled 100 V E-mode GaN transistor Rev 200402
	GS66502B	949Kb / 14P	Bottom-side cooled 650 V E-mode GaN transistor Rev 200402
	GS66504B	975Kb / 14P	Bottom-side cooled 650 V E-mode GaN transistor Rev 200402
	GS66506T	1,012Kb / 15P	Top-side cooled 650 V E-mode GaN transistor Rev 200402
	GS66508T	1Mb / 17P	Top-side cooled 650 V E-mode GaN transistor Rev 200402
	GS66516B	1Mb / 16P	Bottom-side cooled 650 V E-mode GaN transistor Rev 211025
	GS66516T	1Mb / 17P	Top-side cooled 650 V E-mode GaN transistor Rev 210727
Teledyne Technologies I...	TDG100E90BEP	2Mb / 19P	Bottom-side cooled, 100V E-mode GaN transistor Product Specification 04-2020 Rev1

More results

GS66508B Datasheet(PDF) 1 Page - GaN Systems Inc.

GS66508B Datasheet(HTML) 1 Page - GaN Systems Inc.

Similar Part No. - GS66508B

Similar Description - GS66508B

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL