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IXFK230N20 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IXFK230N20
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXFK230N20 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IXFK230N20 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IXFK230N20 Datasheet HTML 2Page - Inchange Semiconductor Company Limited IXFK230N20 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IXFK230N20
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 3mA
200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=3.0mA
2.5
--
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 60A
--
7.5
9.5
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
--
--
±
200
nA
IDSS
Drain-Source Leakage Current
VDS= 100V; VGS= 0V;@Tc=25℃
--
--
50
uA
VSD
Diode forward voltage
ISD= 60A, VGS = 0 V
--
--
1.3
V
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
-
10656
-
pF
Coss
Output Capacitance
-
389
-
Crss
Reverse Transfer Capacitance
-
16
-
Qg
Total Gate Charge
VDD = 100V,
ID = 100A,
VGS = 10V
-
145
-
nC
Qgs
Gate-Source Charge
-
49
-
Qgd
Gate-Drain Charge
-
27
-
td(on)
Turn-on Delay Time
VDD = 100V,
ID = 100A,
RG = 1Ω
-
46
-
ns
tr
Turn-on Rise Time
-
21
-
td(off)
Turn-off Delay Time
-
88
-
tf
Turn-off Fall Time
-
18
-
Qrr
Reverse Recovery Charge
-
2.5
-
uC



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