Philips Semiconductors

Product specification

Thyristors

BT151F series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated thyristors in a full

SYMBOL

PARAMETER

MAX.

MAX.

MAX. UNIT

pack, plastic envelope, intended for

use in applications requiring high

BT151F-

500

650

800

bidirectional

blocking

voltage

V

Repetitive peak off-state

500

650

800

V

capability and high thermal cycling

V

RRM

voltages

performance.

Typical

applications

I

T(AV)

Average on-state current

5.7

5.7

5.7

A

include motor control, industrial and

I

T(RMS)

RMS on-state current

9

9

9

A

domestic lighting, heating and static

I

TSM

Non-repetitive peak on-state

100

100

100

A

switching.

current

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

cathode

2

anode

3

gate

case

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-650

-800

V

Repetitive peak off-state

-

500

1

650

1

800

V

voltages

I

T(AV)

Average on-state current

half sine wave; T

-

5.7

A

I

T(RMS)

RMS on-state current

all conduction angles

-

9

A

I

TSM

Non-repetitive peak

half sine wave; T

on-state current

to surge; with reapplied V

DRM(max)

t = 10 ms

-

100

A

t = 8.3 ms

-

110

A

I

t = 10 ms

-

50

A

dI

Repetitive rate of rise of

I

-

50

A/

µs

on-state current after

dI

triggering

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

V

RGM

Peak reverse gate voltage

-

5

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.5

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

ak

g

12 3

case

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/

µs.

February 1996

1

Rev 1.100