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LMV227SD Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LMV227SD
Description  Production RF Tested, RF Power Detector for CDMA and WCDMA
PDF  12 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMV227SD Datasheet(HTML) 3 Page - National Semiconductor (TI)

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5.0 DC and AC Electrical Characteristics
Unless otherwise specified, all limits are guaranteed to V
DD = 5.0V; TJ = 25˚C. Boldface limits apply at temperature extremes.
(Note 4)
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
DD
Supply Current
Active Mode: RF
IN/EN =VDD (DC), No
RF Input Power Present.
5.3
7
9
mA
Shutdown: RF
IN/EN = GND (DC), No
RF Input Power Present.
0.49
4.5
µA
V
LOW
E
N Logic Low Input Level
(Note 6)
0.8
V
V
HIGH
E
N Logic High Input Level
(Note 6)
1.8
V
t
on
Turn-on- Time
No RF Input Power Present
2.1
µs
t
r
Rise Time (Note 7)
Step from No Power to 0 dBm Applied
4.5
µs
I
EN
Current Into RF
IN/EN Pin
1
µA
P
IN, MIN
Input Power Range (Note 5)
-30
0
dBm
-43
-13
dBV
Logarithmic Slope (Note 8)
900 MHz
43.6
mV/dB
1800 MHz
44.5
1900 MHz
44.5
2000 MHz
43.7
Logarithmic Intercept (Note 8)
900 MHz
-48.1
dBm
1800 MHz
-45.6
1900 MHz
-44.2
2000 MHz
-45.6
V
OUT
Output Voltage
No RF Input Power Present
211
400
mV
R
OUT
Output Impedance
No RF Input Power Present
23.4
29
31
k
Ω
e
n
Output Referred Noise
RF Input = 1800 MHz, −10 dBm,
Measured at 10 kHz
700
nV/
Variation over Temperature
900 MHz, RF
IN = 0 dBm Referred to
25˚C
+0.89
−1.16
dB
1800 MHz, RF
IN = 0 dBm Referred to
25˚C
+0.3
−0.82
1900 MHz, RF
IN = 0 dBm Referred to
25˚C
+0.34
−0.63
2000 MHz RF
IN = 0 dBm Referred to
25˚C
+0.22
−0.75
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model: 1.5 k
Ω in series with 100 pF. Machine model, 0Ω in series with 100 pF.
Note 3: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD =
(TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly into a PC board
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ =TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
Note 5: Power in dBV = dBm −13 when the impedance is 50
Ω.
Note 6: All limits are guaranteed by design or statistical analysis
Note 7: Typical values represent the most likely parametric norm.
Note 8: Device is set in active mode with a 10 k
Ω resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC coupled to the RFIN/EN
pin using a 100 pF coupling capacitor.
www.national.com
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