BT152B datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Thyristors

BT152B series

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-mb

Thermal resistance

1.1

K/W

junction to mounting base

th j-a

Thermal resistance

minimum footprint, FR4 board

K/W

junction to ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Gate trigger current

D = 12 V; IT = 0.1 A

Latching current

D = 12 V; IGT = 0.1 A

Holding current

D = 12 V; IGT = 0.1 A

On-state voltage

T = 40 A

1.4

1.75

Gate trigger voltage

D = 12 V; IT = 0.1 A

0.6

1.5

D = VDRM(max); IT = 0.1 A; Tj = 125 ˚C

0.25

0.4

D, IR

Off-state leakage current

D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

0.2

1.0

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

D/dt

Critical rate of rise of

DM = 67% VDRM(max); Tj = 125 ˚C;

200

300

µs

off-state voltage

exponential waveform gate open circuit

Gate controlled turn-on

D = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs;

µs

time

TM = 40 A

Circuit commutated

D = 67% VDRM(max); Tj = 125 ˚C;

µs

turn-off time

TM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;

D/dt = 50 V/µs; RGK = 100 Ω

September 1997

Rev 1.100

BT152B Datasheet(PDF) 2 Page - NXP Semiconductors

BT152B Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL