BT168G datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Thyristors

BT168 series

logic level for RCD/ GFI/ LCCB Applications

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-lead

Thermal resistance

K/W

junction to lead

th j-a

Thermal resistance

pcb mounted; lead length = 4mm

150

K/W

junction to ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Gate trigger current

D = 12 V; IT = 10 mA; gate open circuit

200

µA

Latching current

D = 12 V; IGT = 0.5 mA; RGK = 1 kΩ

-2

Holding current

D = 12 V; IGT = 0.5 mA; RGK = 1 kΩ

-2

On-state voltage

T = 1 A

1.2

1.35

Gate trigger voltage

D = 12 V; IT = 10 mA; gate open circuit

0.5

0.8

D = VDRM(max); IT = 10 mA; Tj = 125 ˚C;

0.2

0.3

gate open circuit

D, IR

Off-state leakage current

D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;

0.05

0.1

GK = 1 kΩ

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

D/dt

Critical rate of rise of

DM = 67% VDRM(max); Tj = 125 ˚C;

µs

off-state voltage

exponential waveform; R

GK = 1 kΩ

Gate controlled turn-on

TM = 2 A; VD = VDRM(max); IG = 10 mA;

µs

time

G/dt = 0.1 A/µs

Circuit commutated

D = 67% VDRM(max); Tj = 125 ˚C;

100

µs

turn-off time

TM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;

D/dt = 2 V/µs; RGK = 1 kΩ

September 1997

Rev 1.100

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