BT258B datasheet(1/6 Pages) PHILIPS

Part #	BT258B

Description	Thyristors logic level

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

1 / 6 page

Philips Semiconductors

Product specification

Thyristors

BT258B series

logic level

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated,

sensitive

gate

SYMBOL

PARAMETER

MAX.

MAX. UNIT

thyristors

in

a

plastic

envelope

suitable

for

surface

mounting,

BT258B-

500R

600R

800R

intended for use in general purpose

V

DRM,

Repetitive peak off-state

500

600

800

V

switching

and

phase

control

V

RRM

voltages

applications.

These

devices

are

I

T(AV)

Average on-state current

5

A

intended to be interfaced directly to

I

T(RMS)

RMS on-state current

8

A

microcontrollers,

logic

integrated

I

TSM

Non-repetitive peak on-state

75

A

circuits and other low power gate

current

trigger circuits.

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

cathode

2

anode

3

gate

mb

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500R -600R -800R

V

DRM, VRRM

Repetitive peak off-state

-

500

1

600

1

800

V

voltages

I

T(AV)

Average on-state current

half sine wave; T

mb ≤ 111 ˚C

-

5

A

I

T(RMS)

RMS on-state current

all conduction angles

-

8

A

I

TSM

Non-repetitive peak

half sine wave; T

j = 25 ˚C prior to

on-state current

surge

t = 10 ms

-

75

A

t = 8.3 ms

-

82

A

I

2tI2t for fusing

t = 10 ms

-

28

A

2s

dI

T/dt

Repetitive rate of rise of

I

TM = 10 A; IG = 50 mA;

-

50

A/

µs

on-state current after

dI

G/dt = 50 mA/µs

triggering

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

RGM

Peak reverse gate voltage

-

5

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.5

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

2

˚C

temperature

13

mb

2

ak

g

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/

µs.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k

Ω or less.

September 1997

1

Rev 1.100

Similar Part No. - BT258B

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BT258	44Kb / 6P	Thyristors logic level October 1997 Rev 1.200
HAOPIN MICROELECTRONICS...	BT258	312Kb / 5P	Blocking voltage to 800 V
NXP Semiconductors	BT258-500R	44Kb / 6P	Thyristors logic level October 1997 Rev 1.200
WeEn Semiconductors	BT258-500R	204Kb / 12P	Logic level thyristor
NXP Semiconductors	BT258-600R	44Kb / 6P	Thyristors logic level October 1997 Rev 1.200

More results

Similar Description - BT258B

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BT148	43Kb / 6P	Thyristors logic level October 1997 Rev 1.300
	BT148W	53Kb / 7P	Thyristors logic level October 1997 Rev 1.300
	BT149	42Kb / 6P	Thyristors logic level September 1997 Rev 1.200
	BT150S	49Kb / 6P	Thyristors logic level October 1997 Rev 1.100
	BT258	44Kb / 6P	Thyristors logic level October 1997 Rev 1.200
	BT258U	51Kb / 6P	Thyristors logic level March 1999 Rev 1.000
	BT258S-800R	49Kb / 6P	Thyristors logic level October 2002-Rev 2.000
Tiger Electronic Co.,Lt...	BT169D	152Kb / 1P	Thyristors logic level
Tiger Electronic Co.,Lt...	C106M	57Kb / 1P	Thyristors logic level
Guangdong Kexin Industr...	BT169DW	79Kb / 2P	Thyristors logic level

More results

BT258B Datasheet(PDF) 1 Page - NXP Semiconductors

BT258B Datasheet(HTML) 1 Page - NXP Semiconductors

Similar Part No. - BT258B

Similar Description - BT258B

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL