TLMP1100 datasheet(2/15 Pages) VISHAY

2 / 15 page

www.vishay.com

Document Number 83173

Rev. 1.8, 30-Aug-04

VISHAY

TLMB / G / O / P / S / Y1100

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

TLMS1100 ,TLMO1100 ,TLMY1100 ,TLMG1100, TLMP1100

TLMB1100

Optical and Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Red

TLMS1100

2) in one Packing Unit I

Vmax/IVmin ≤ 1.6

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

DC Forward current

Tamb ≤ 60 °C

Surge forward current

tp ≤ 10 µsIFSM

0.5

Power dissipation

Tamb ≤ 75 °C

Junction temperature

120

°C

Operating temperature range

Tamb

- 40 to + 100

°C

Storage temperature range

Tstg

- 40 to + 100

°C

Soldering temperature

acc. Vishay spec

Tsd

260

°C

Thermal resistance junction/

ambient

mounted on PC board

(pad size > 5 mm2)

RthJA

480

K/W

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

DC Forward current

Tamb ≤ 60 °C

Surge forward current

tp ≤ 10 µsIFSM

0.1

Power dissipation

Tamb ≤ 60 °C

Junction temperature

100

°C

Operating temperature range

Tamb

- 40 to + 100

°C

Storage temperature range

Tstg

- 40 to + 100

°C

Soldering temperature

acc. Vishay spec

Tsd

260

°C

Thermal resistance junction/

ambient

mounted on PC board

(pad size > 5 mm2)

RthJA

480

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Luminous intensity 2)

IF = 20 mA

mcd

Dominant wavelength

IF = 20 mA

627

633

639

Peak wavelength

IF = 20 mA

645

Angle of half intensity

IF = 20 mA

± 80

deg

Forward voltage

IF = 20 mA

2.1

3.0

Reverse voltage

IR = 10 µAVR

Junction capacitance

VR = 0, f = 1 MHz

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