BCP52 datasheet(1/4 Pages) DGNJDZ

Part #	BCP52

Description	SOT-223 Plastic-Encapsulate Transistors

PDF	4 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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BCP51,52,53

TRANSISTOR (PNP)

FEATURES

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP54...BCP56 (NPN)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

BCP51

BCP52

BCP53

Unit

VCBO

Collector-Base Voltage

-45

-60

-100

V

VCEO

Collector-Emitter Voltage

-45

-60

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1

A

PC

Collector Power Dissipation

1.5

W

RθJA

Thermal Resistance Junction to Ambient

94

℃/W

TJ,Tstg

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

BCP51

BCP52

BCP53

V(BR)CBO

IC=- 0.1mA,IE=0

-45

-60

-100

V

Collector-emitter breakdown voltage

BCP51

BCP52

BCP53

V(BR)CEO

IC= -10mA,IB=0

-45

-60

-80

V

Base-emitter breakdown voltage

V(BR)EBO

IE= -10μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB= -30 V, IE=0

-100

nA

hFE(1)

VCE=-2V, IC=-5mA

25

hFE(2)

VCE= -2V, IC=-150m A

63

250

DC current gain

hFE(3)

VCE= -2V, IC=-500m A

25

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-0.5

V

Base-emitter voltage

VBE

VCE=-2V, IC=-500m A

-1

V

Transition frequency

fT

VCE=-10V,IC=-50mA,f=100MHz

100

MHz

CLASSIFICATION OF hFE(2)

Rank

BCP51-10, BCP52-10, BCP53-10

BCP51-16, BCP52-16, BCP53-16

Range

63-160

100-250

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

Operation Junction and Storage Temperature Range

℃

Peak Pulse Collector Current

Base Current-Continuous

Peak Pulse Base Current

-2

-100

-200

A

mA

ICM

IB

IBM

SOT-223 Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

1/4

www.dgnjdz.com

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